The Effect of Uniaxial Stress on the Density of States of Shallow Donor Impurities in GaAs Quantum Wells
We have calculated the density of impurity states (DOIS) as a function of applied uniaxial stress of shallow hydrogen donor impurity in a quantum well (QW). The calculations were carried out using a variational procedure within the effective mass approximation. The results show that the density of impurity states is a function of applied stress. It is therefore important to take into consideration the effect of applied stress in a QW when carrying out experimental studies of optical and electronic properties of such heterostructures.